High-k materials in Dynamic Random Access Memories (DRAM). Atomic scale engineering of HfO2-based dielectrics for future DRAM applications.

📖 High-k materials in Dynamic Random Access Memories (DRAM). Atomic scale engineering of HfO2-based dielectrics for future DRAM applications.

I would like to give you an outstanding opportunity to experience more about modern materials for Dynamic Random Access Memories. Therefore I give this book into your hands. You will find here a theory chapter focusing on DRAM physics as well as a deep description of deposition and characterization methods used in this work. Finally, you will discover how to engineer materials on an atomic scale and how to investigate those thin films.

О книге

автор, издательство, серия
Издательство
S?dwestdeutscher Verlag f?r Hochschulschriften
ISBN
9783838130187
Год
2011